| PART |
Description |
Maker |
| 1SV298H |
Type Attenuator Applications
|
Sanyo Semicon Device
|
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 94302-11 |
50 RF Digital Step Attenuator For Rad-Hard Space Applications 6-bit, 31.5 dB, DC - 4.0 GHz 0 MHz - 4000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.75 dB INSERTION LOSS-MAX
|
Peregrine Semiconductor, Corp.
|
| 2SC5713 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SC5785 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SK1061 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
|
TOSHIBA
|
| 1SV31207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S04E07 JDP2S04E |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
| 2SD1509 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS, SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
| 1SV128 1SV128TE85LF |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS
|
Toshiba Corporation
|
